Graphene oxide (GO) ultrathin film can be wafer-scale deposited by spin coating, can be patterned by laser interference lithography and oxygen plasma etching, can be thinned atomically (0.26 nm/min) and oxidized by ozone treatment, and is a relatively transparent and low-refractive-index material compared to pristine graphene. All those unique properties prompt us to realize a low-loss (∼5 dB/cm), high-extinction-ratio (19 dB), and narrowband (0.
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