Photonic probabilistic machine learning using quantum vacuum noise.

Probabilistic machine learning utilizes controllable sources of randomness to encode uncertainty and enable statistical modeling. Harnessing the pure randomness of quantum vacuum noise, which stems from fluctuating electromagnetic fields, has shown promise for high speed and energy-efficient stochastic photonic elements. Nevertheless, photonic computing hardware which can control these stochastic elements to program probabilistic machine learning algorithms has been limited.

Gate Controlled Excitonic Emission in Quantum Dot Thin Films.

Formation of charged trions is detrimental to the luminescence quantum efficiency of colloidal quantum dot (QD) thin films as they predominantly undergo nonradiative recombination. In this regard, control of charged trion formation is of interest for both fundamental characterization of the quasi-particles and performance optimization. Using CdSe/CdS QDs as a prototypical material system, here we demonstrate a metal-oxide-semiconductor capacitor based on QD thin films for studying the background charge effect on the luminescence efficiency and lifetime.

Highly multicolored light-emitting arrays for compressive spectroscopy.

Miniaturized, multicolored light-emitting device arrays are promising for applications in sensing, imaging, computing, and more, but the range of emission colors achievable by a conventional light-emitting diode is limited by material or device constraints. In this work, we demonstrate a highly multicolored light-emitting array with 49 different, individually addressable colors on a single chip. The array consists of pulsed-driven metal-oxide-semiconductor capacitors, which generate electroluminescence from microdispensed materials spanning a diverse range of colors and spectral shapes, enabling facile generation of arbitrary light spectra across a broad wavelength range (400 to 1400 nm).

Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous.

Black phosphorus has emerged as a unique optoelectronic material, exhibiting tunable and high device performance from mid-infrared to visible wavelengths. Understanding the photophysics of this system is of interest to further advance device technologies based on it. Here we report the thickness dependence of the photoluminescence quantum yield at room temperature in black phosphorus while measuring the various radiative and non-radiative recombination rates.

Deep ultraviolet spontaneous emission enhanced by layer dependent black phosphorus plasmonics.

Although graphene has been the primary material of interest recently for spontaneous emission engineering through the Purcell effect, it features isotropic and thickness-independent optical properties. In contrast, the optical properties of black Phosphorus (BP) are in-plane anisotropic; which supports plasmonic modes and are thickness-dependent, offering an additional degree of freedom for control. Here we investigate how the anisotropy and thickness of BP affect spontaneous emission from a Hydrogenic emitter.

Efficiency Roll-Off Free Electroluminescence from Monolayer WSe.

Exciton-exciton annihilation (EEA) is a nonradiative process commonly observed in excitonic materials at high exciton densities. Like Auger recombination, EEA degrades luminescence efficiency at high exciton densities and causes efficiency roll-off in light-emitting devices. Near-unity photoluminescence quantum yield has been demonstrated in transition metal dichalcogenides (TMDCs) at all exciton densities with optimal band structure modification mediated by strain.

Enhanced Neutral Exciton Diffusion in Monolayer WS by Exciton-Exciton Annihilation.

Dominant recombination pathways in monolayer transition metal dichalcogenides (TMDCs) depend primarily on background carrier concentration, generation rate, and applied strain. Charged excitons formed in the presence of background carriers mainly recombine nonradiatively. Neutral excitons recombine completely radiatively at low generation rates, but experience nonradiative exciton-exciton annihilation (EEA) at high generation rates.

Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus.

The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs.

Engineering Exciton Recombination Pathways in Bilayer WSe for Bright Luminescence.

Exciton-exciton annihilation (EEA) in counterdoped monolayer transition metal dichalcogenides (TMDCs) can be suppressed by favorably changing the band structure with strain. The photoluminescence (PL) quantum yield (QY) monotonically approaches unity with strain at all generation rates. In contrast, here in bilayers (2L) of tungsten diselenide (WSe) we observe a nonmonotonic change in EEA rate at high generation rates accompanied by a drastic enhancement in their PL QY at low generation rates.

Inhibited nonradiative decay at all exciton densities in monolayer semiconductors.

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications.

Actively variable-spectrum optoelectronics with black phosphorus.

Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures) or variations in the composition of semiconductor alloys during growth are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication.

Universal Inverse Scaling of Exciton-Exciton Annihilation Coefficient with Exciton Lifetime.

Be it for essential everyday applications such as bright light-emitting devices or to achieve Bose-Einstein condensation, materials in which high densities of excitons recombine radiatively are crucially important. However, in all excitonic materials, exciton-exciton annihilation (EEA) becomes the dominant loss mechanism at high densities. Typically, a macroscopic parameter named EEA coefficient () is used to compare EEA rates between materials at the same density; higher implies higher EEA rate.

Neutral Exciton Diffusion in Monolayer MoS.

Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next generation optoelectronic devices. The exciton diffusion length is a critical parameter that reflects the quality of exciton transport in monolayer TMDCs and limits the performance of many excitonic devices. Although diffusion lengths of a few hundred nanometers have been reported in the literature for as-exfoliated monolayers, these measurements are convoluted by neutral and charged excitons (trions) that coexist at room temperature due to natural background doping.

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors.

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS and WS monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation.

A Robust Heart Rate Monitoring Scheme Using Photoplethysmographic Signals Corrupted by Intense Motion Artifacts.

Goal: Although photoplethysmographic (PPG) signals can monitor heart rate (HR) quite conveniently in hospital environments, trying to incorporate them during fitness programs poses a great challenge, since in these cases, the signals are heavily corrupted by motion artifacts.

Methods: In this paper, we present a novel signal processing framework which utilizes two channel PPG signals and estimates HR in two stages. The first stage eliminates any chances of a runaway error by resorting to an absolute criterion condition based on ensemble empirical mode decomposition.