Flexible Soft X-Ray Image Sensors based on Metal Halide Perovskites With High Quantum Efficiency.

Soft X-ray imaging is a powerful tool to explore the structure of cells, probe material with nanometer resolution, and investigate the energetic phenomena in the universe. Conventional soft X-ray image sensors are by and large Si-based charge coupled devices that suffer from low frame rates, complex fabrication processes, mechanical inflexibility, and required cooling below -60 °C. Here, a soft X-ray photodiode is reported based on low-cost metal halide perovskite with comparable performance to commercial Si-based device.

External quantum efficiency enhancement of GaN-based blue LEDs by treating their full-M-sided hexagonal mesa with TMAH solution.

In recent years, III-Nitride-based micro light-emitting diodes (micro-LEDs) have emerged in many fields and gained more attention. However, fabricating high-efficiency micro-LEDs still remains a challenge due to the presence of sidewall damage. In this study, a GaN-based single blue micro-LED with a full-M-sided hexagonal mesa was prepared.

An Antiferromagnetic Neuromorphic Memory Based on Perpendicularly Magnetized CoO.

Antiferromagnets (AFMs) are ideal materials to boost neuromorphic computing toward the ultrahigh speed and ultracompact integration regime. However, developing a suitable AFM neuromorphic memory remains an aspirational but challenging goal. In this work, we construct such a memory based on the CoO/Pt heterostructure, in which the collinear insulating AFM CoO shows a strong perpendicular anisotropy facilitating its electrical readout and writing.

Reservoir Computing Based on Oxygen-Vacancy-Mediated X-ray Optical Synaptic Device for Medical CT Bone Diagnosis.

Recognition and judgment of X-ray computed tomography (CT) images play a crucial role in medical diagnosis and disease prevention. However, the storage and calculation of the X-ray imaging system applied in the traditional CT diagnosis is separate, and the pathological judgment is based on doctors' experience, which will affect the timeliness and accuracy of decision-making. In this paper, a simple-structured reservoir computing network (RC) is proposed based on GaO X-ray optical synaptic devices to recognize medical skeletal CT images with high accuracy.

Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection.

Detecting high-energy photons from the deep ultraviolet (DUV) to X-rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting high-energy photons. However, the implementation of highly sensitive and high-speed detectors based on WBG semiconductors has been a huge challenge due to the inevitable deep level traps and the lack of appropriate device structure engineering.

Epitaxial Growth of Large-Scale 2D CrTe Films on Amorphous Silicon Wafers With Low Thermal Budget.

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO) and silicon nitride (SiN). Here, a seeded growth technique for crystallizing CrTe films on amorphous SiN/Si and SiO/Si substrates with a low thermal budget is presented.

Magnetically tunable diffractive optical elements based on ion-irradiated ultrathin ferromagnetic stacks.

We report a novel type of magnetically tunable diffractive optical element (DOE) based on ultrathin ferromagnetic (FM) Pt/Co stacks. The Pt/Co stacks are irradiated by Ar ions at selected areas so that the perpendicular anisotropy is spatially modulated and the DOEs can be tuned by an external magnetic field through the magnetooptical effect. Based on this concept, a diffraction grating and a Fresnel zone plate (FZP) were developed, and complementary experimental results corroborate that a magnetic field can simultaneously manipulate both the zeroth and the first diffraction orders of these DOEs.

High Performance of Zero-Power-Consumption MOCVD-Grown β-GaO-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-GaO heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 10 at zero bias and >10 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C.

In-sensor reservoir computing system for latent fingerprint recognition with deep ultraviolet photo-synapses and memristor array.

Detection and recognition of latent fingerprints play crucial roles in identification and security. However, the separation of sensor, memory, and processor in conventional ex-situ fingerprint recognition system seriously deteriorates the latency of decision-making and inevitably increases the overall computing power. In this work, a photoelectronic reservoir computing (RC) system, consisting of DUV photo-synapses and nonvolatile memristor array, is developed to detect and recognize the latent fingerprint with in-sensor and parallel in-memory computing.

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy.

AlGaN nanorods have attracted increasing amounts of attention for use in ultraviolet (UV) optoelectronic devices. Here, self-assembled AlGaN nanorods with embedding quantum disks (Qdisks) were grown on Si(111) using plasma-assisted molecular beam epitaxy (PA-MBE). The morphology and quantum construction of the nanorods were investigated and well-oriented and nearly defect-free nanorods were shown to have a high density of about 2 × 10 cm.

Observation of polarity-switchable photoconductivity in III-nitride/MoS core-shell nanowires.

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials.

Micron channel length ZnO thin film transistors using bilayer electrodes.

Micro light-emitting diodes (Micro-LEDs) are currently attracting more and more attention. Thin film transistors (TFTs) with micron channel lengths can be used to drive Micro-LEDs. The key parameters of TFTs, such as mobility, I/I and threshold voltage, still need to be improved.

Evolution of the conductive filament system in HfO-based memristors observed by direct atomic-scale imaging.

The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the composition and structure of conductive filaments, and especially the evolution of conductive filament surroundings, remain controversial in HfO-based memristors. Here, the conductive filament system in the amorphous HfO-based memristors with various top electrodes is revealed to be with a quasi-core-shell structure consisting of metallic hexagonal-HfO and its crystalline surroundings (monoclinic or tetragonal HfO).

High-Performance Harsh-Environment-Resistant GaO Solar-Blind Photodetectors via Defect and Doping Engineering.

Gallium oxide (Ga O ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga O material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaO (a-GaO ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application.

Ultra-High Performance Amorphous Ga O Photodetector Arrays for Solar-Blind Imaging.

The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga O via a post-annealing process. The post-annealed MSM a-Ga O SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 10 at 5 V.

Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect.

Metal oxide thin-films transistors (TFTs) produced from solution-based printing techniques can lead to large-area electronics with low cost. However, the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the "coffee-ring" effect. Here, we report a novel approach to print high-performance indium tin oxide (ITO)-based TFTs and logic inverters by taking advantage of such notorious effect.

AlGaN-based deep ultraviolet micro-LED emitting at 275 nm.

The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at ∼275 was carried out, with an emphasis on fabricated devices having a diameter of 300, 200, 100, 50, and 20 µm, respectively. It was revealed that the LED chips with smaller mesa areas deliver considerably higher light output power density; meanwhile, they can sustain a higher current density, which is mainly attributed to the enhanced current spreading uniformity in micro-scale chips. Importantly, when the diameter of LED chips decreases from 300 µm to 20 µm, the peak external quantum efficiency (EQE) increases by 20%, and the EQE peak current density can be boosted from 8.

Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application.

Resistive switching devices have tremendous potential for memory, logic, and neuromorphic computing applications. Cation-based resistive switching devices intrinsically show nonvolatile memory characteristics under high compliance current (I ), while show volatile threshold switching (TS) selector characteristics under low I . However, separate researches about cation-based memory or selector are hard to evade the typical current-retention dilemma, which results in the hardship to obtain low-current memory and high-current selector.

Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier.

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor quantum efficiency and low optical power. In this work, we proposed a DUV LED structure that includes five unique AlGaN quantum barriers (QBs); Each QB has a linear-increment of Al composition by 0.03 along the growth direction, unlike those commonly used flat QBs in conventional LEDs.

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.

Synaptic devices with bipolar analog resistive switching behavior are the building blocks for memristor-based neuromorphic computing. In this work, a fully complementary metal-oxide semiconductor (CMOS)-compatible, forming-free, and non-filamentary memristive device (Pd/Al₂O₃/TaO/Ta) with bipolar analog switching behavior is reported as an artificial synapse for neuromorphic computing. Synaptic functions, including long-term potentiation/depression, paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), are implemented based on this device; the switching energy is around 50 pJ per spike.

An Overview of the Ultrawide Bandgap GaO Semiconductor-Based Schottky Barrier Diode for Power Electronics Application.

Gallium oxide (GaO) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of GaO semiconductor have been analyzed. And the recent investigations on the GaO-based SBD have been reviewed.

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects.

Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time.

Negative differential resistance effect induced by metal ion implantation in SiO film for multilevel RRAM application.

Pt/SiO:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R /R ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles.

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO/Pt RRAM.

The sneak path problem is one of the major hindrances to the application of high-density crossbar resistive random access memory; however, complementary resistive switching (CRS) is an effective solution to this problem. The co-existence of resistive switching (RS) and CRS is possible within the same device. Therefore, a precise control is highly required for the successful utilization of different modes.