The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGaO Films.

Spinel ZnGaO films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crystal quality. The effect of thermal annealing on the microstructural and optoelectronic properties of ZnGaO films was systematically investigated in various ambiences, such as air, nitrogen, and oxygen.

Enhanced Deep-Ultraviolet Responsivity in Aluminum-Gallium Oxide Photodetectors via Structure Deformation by High-Oxygen-Pressure Pulsed Laser Deposition.

Aluminum-gallium oxide (AGO) thin films with wide bandgaps of greater than 5.0 eV were grown using pulsed laser deposition. As evidenced by X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy, the oxygen chamber pressure considerably affected the lattice deformation in the AGO materials.