Multilevel resistive random access memory achieved by MoO/Hf/MoOstack and its application in tunable high-pass filter.

In this work, the multilevel resistive random access memories (RRAMs) have been achieved by using the structure of Pt/MoO/Hf/MoO/Pt with four stable resistance states. The devices show good retention property of each state (>10s) and large memory window (>10). The simulation and experimental study reveal that the resistive switching mechanism is ascribed to combination of the conductive filament in the stack of MoO/Hf next to the top electrode and redox reaction at the interface of Hf/MoOnext to bottom electrode.

[Effect of Characteristic Variable Extraction on Accuracy of Cu in Navel Orange Peel by LIBS].

Heavy metals pollution in foodstuffs is more and more serious. It is impossible to satisfy the modern agricultural development by conventional chemical analysis. Laser induced breakdown spectroscopy (LIBS) is an emerging technology with the characteristic of rapid and nondestructive detection.