Evidence for Dirac flat band superconductivity enabled by quantum geometry.

In a flat band superconductor, the charge carriers' group velocity v is extremely slow. Superconductivity therein is particularly intriguing, being related to the long-standing mysteries of high-temperature superconductors and heavy-fermion systems. Yet the emergence of superconductivity in flat bands would appear paradoxical, as a small v in the conventional Bardeen-Cooper-Schrieffer theory implies vanishing coherence length, superfluid stiffness and critical current.

Gate-Tunable Magnetism and Giant Magnetoresistance in Suspended Rhombohedral-Stacked Few-Layer Graphene.

Conventionally, magnetism arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. It can also emerge in perfect lattices from nonmagnetic elements, such as that exemplified by the Stoner criterion. Here we report tunable magnetism in suspended rhombohedral-stacked few-layer graphene (r-FLG) devices with flat bands.

Substrate-Dependent Band Structures in Trilayer Graphene/h-BN Heterostructures.

The tight-binding model has been spectacularly successful in elucidating the electronic and optical properties of a vast number of materials. Within the tight-binding model, the hopping parameters that determine much of the band structure are often taken as constants. Here, using ABA-stacked trilayer graphene as the model system, we show that, contrary to conventional wisdom, the hopping parameters and therefore band structures are not constants, but are systematically variable depending on their relative alignment angle between h-BN.

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene.

Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B_{⊥} and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1, and 2 helical edge states, respectively.

Correlated insulating and superconducting states in twisted bilayer graphene below the magic angle.

The emergence of flat bands and correlated behaviors in "magic angle" twisted bilayer graphene (tBLG) has sparked tremendous interest, though its many aspects are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of ~0.93°, which is smaller than the magic angle by 15%.

Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe Heterostructures.

We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultraclean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC.

Fractional and Symmetry-Broken Chern Insulators in Tunable Moiré Superlattices.

We study dual-gated graphene bilayer/hBN moiré superlattices. Under zero magnetic field, we observe additional resistance peaks as the charge density varies. The peaks' resistivities vary approximately quadratically with an applied perpendicular displacement field .

Quantum parity Hall effect in Bernal-stacked trilayer graphene.

The quantum Hall effect has recently been generalized from transport of conserved charges to include transport of other approximately conserved-state variables, including spin and valley, via spin- or valley-polarized boundary states with different chiralities. Here, we report a class of quantum Hall effect in Bernal- or ABA-stacked trilayer graphene (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the system's mirror reflection symmetry. At the charge neutrality point, the longitudinal conductance [Formula: see text] is first quantized to [Formula: see text] at a small perpendicular magnetic field [Formula: see text], establishing the presence of four edge channels.

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene.

As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring the Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as a nonmonotonic dependence of conductivity on the charge density n and out-of-plane electric field D, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D, and B.

Integer and Fractional Quantum Hall effect in Ultrahigh Quality Few-layer Black Phosphorus Transistors.

As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as the functional dependence of Landau level (LL) gaps on magnetic field B, and possible anisotropic fractional QH states. Using encapsulated few-layer BP transistors with mobility up to 55 000 cm/(V s), we extracted LL gaps over an exceptionally wide range of B for QH states at filling factors -1 to -4, which are determined to be linear in B, thus resolving a controversy raised by its anisotropy. Furthermore, a fractional QH state at ν ≈ -4/3 and an additional feature at -0.

Tunable Symmetries of Integer and Fractional Quantum Hall Phases in Heterostructures with Multiple Dirac Bands.

The copresence of multiple Dirac bands in few-layer graphene leads to a rich phase diagram in the quantum Hall regime. Using transport measurements, we map the phase diagram of BN-encapsulated ABA-stacked trilayer graphene as a function charge density n, magnetic field B, and interlayer displacement field D, and observe transitions among states with different spin, valley, orbital, and parity polarizations. Such a rich pattern arises from crossings between Landau levels from different subbands, which reflect the evolving symmetries that are tunable in situ.

Energy Gaps and Layer Polarization of Integer and Fractional Quantum Hall States in Bilayer Graphene.

Owing to the spin, valley, and orbital symmetries, the lowest Landau level in bilayer graphene exhibits multicomponent quantum Hall ferromagnetism. Using transport spectroscopy, we investigate the energy gaps of integer and fractional quantum Hall (QH) states in bilayer graphene with controlled layer polarization. The state at filling factor ν=1 has two distinct phases: a layer polarized state that has a larger energy gap and is stabilized by high electric field, and a hitherto unobserved interlayer coherent state with a smaller gap that is stabilized by large magnetic field.

Microsatellite DNA variation of the gametophyte clones isolated from introduced Laminaria japonica (Phaeophyta) and L. longissima of China and varieties derived from them.

The variation of 90 Laminaria gametophyte clones representing the introduced Laminaria japonica (Group 1) and Laminaria longissima (Group 2), the varieties of L. japonica (Group 3) and the varieties derived from interspecific hybrids (Group 4) was determined with 18 microsatellite markers. The allelic diversity and Nei's gene diversity of Group 1 were significantly higher than those of Group 2 (2.