Publications by authors named "Shengzhi Xu"

Carrier selective contacts with passivation effects are considered to have a significant influence on the performance of crystalline silicon (c-Si) solar cells. It is essential for electron selective contact materials to meet the requirements of ultra-low contact resistance and excellent passivation effects. This work introduces a stack layer of Lithium Phosphate (LiPO) /Titanium Dioxide (TiO) as a new electron selective passivating contact.

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Silicon heterojunction (SHJ) solar cells have set world-record efficiencies among single-junction silicon solar cells, accelerating their commercial deployment. Despite these clear efficiency advantages, the high costs associated with low-temperature silver pastes (LTSP) for metallization have driven the search for more economical alternatives in mass production. 2D transition metal carbides (MXenes) have attracted significant attention due to their tunable optoelectronic properties and metal-like conductivity, the highest among all solution-processed 2D materials.

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Inorganic perovskite solar cells (IPSCs) have garnered attention in tandem solar cells (TSCs) due to their suitable bandgap and impressive thermal stability. However, the efficiency of inverted IPSCs has been limited by the high trap density on the top surface of inorganic perovskite film. Herein, a method for fabricating efficient IPSCs by reconfiguring the surface properties of CsPbI Br film with 2-amino-5-bromobenzamide (ABA) is developed.

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Occupational exposure to dimethylacetamide (DMAc) has been reported to cause toxic hepatitis. Sixty spandex workers were included in this study to research the clinical manifestations and expression of cytokines and lymphocytes in DMAc-induced toxic hepatitis. Chinese drugs (reduced glutathione and Hugan tablets) were used to treat them.

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In thermodynamics, it is essential to distinguish between state functions and process functions. The reason is that the simple compressible thermodynamic system is a bivariate-process system, and the change of internal energy, a state function, corresponds to two process functions, heat and work. Among the state functions in thermodynamics, entropy is a special one because it has to be defined through a process function, exchanged heat , and a unique factor of integration, 1/.

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Mining frequent subgraphs from a collection of input graphs is an important task for exploratory data analysis on graph data. However, if the input graphs contain sensitive information, releasing discovered frequent subgraphs may pose considerable threats to individual privacy. In this paper, we study the problem of frequent subgraph mining (FSM) under the rigorous differential privacy model.

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In this paper, we study the problem of mining frequent sequences under the rigorous differential privacy model. We explore the possibility of designing a differentially private frequent sequence mining (FSM) algorithm which can achieve both high data utility and a high degree of privacy. We found, in differentially private FSM, the amount of required noise is proportionate to the number of candidate sequences.

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Mining frequent subgraphs from a collection of input graphs is an important topic in data mining research. However, if the input graphs contain sensitive information, releasing frequent subgraphs may pose considerable threats to individual's privacy. In this paper, we study the problem of frequent subgraph mining (FGM) under the rigorous differential privacy model.

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In this paper, we study the problem of mining frequent sequences under the rigorous differential privacy model. We explore the possibility of designing a differentially private frequent sequence mining (FSM) algorithm which can achieve both high data utility and a high degree of privacy. We found, in differentially private FSM, the amount of required noise is proportionate to the number of candidate sequences.

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In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process.

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