Construction of Z-scheme heterojunction by coupling BiSnO and BiOBr with abundant oxygen vacancies: Enhanced photodegradation performance and mechanism insight.

Promoting charge migration and enhancing redox ability of photogenerated carriers are important for the development of highly efficient semiconductor-based photocatalyst. Here, BiOBr/BiSnO heterojunction with oxygen vacancies (OVs) was constructed by homogeneously depositing BiSnO nanoparticles on the Vo-BiOBr surface. The experimental results manifested that Vo-BiOBr/BiSnO displayed better performance for rhodamine B, ciprofloxacin, and tetracycline degradation than counterparts without OVs.

Increased Active Sites and Charge Transfer in the SnS/TiO Heterostructure for Visible-Light-Assisted NO Sensing.

Tin disulfide (SnS) has been extensively researched as a promising sensing material due to its large electronegativity, suitable band gap, earth abundance, and nontoxicity. However, the poor conductivity and slow response/recovery speed at room temperature greatly hinder its application in high-performance practical gas sensors. Herein, to promote the study of SnS-based gas sensors, a hierarchical SnS/TiO heterostructure was synthesized and used as a sensing material to detect NO with the help of light illumination.

Synergically engineering defect and interlayer in SnS for enhanced room-temperature NO sensing.

Defect and interlayer engineering are considered as two promising strategies to alter the electronic structures of sensing materials for improved gas sensing properties. Herein, ethylene glycol intercalated Al-doped SnS (EG-Al-SnS) featuring Al doping, sulfur (S) vacancies, and an expanded interlayer spacing was prepared and developed as an active NO sensing material. Compared to the pristine SnS with failure in detecting NO at room temperature, the developed EG-Al-SnS exhibited a better conductivity, which was beneficial for realizing the room-temperature NO sensing.

Engineering SnO nanorods/ethylenediamine-modified graphene heterojunctions with selective adsorption and electronic structure modulation for ultrasensitive room-temperature NO detection.

Ever-increasing concerns over air quality and the newly emerged internet of things (IoT) for future environmental monitoring are stimulating the development of ultrasensitive room-temperature gas sensors, especially for nitrogen dioxide (NO), one of the most harmful air pollution species released round-the-clock from power plants and vehicle exhausts. Herein, tin dioxide nanorods/ethylenediamine-modified reduced graphene oxide (SnO/EDA-rGO) heterojunctions with selective adsorption and electronic structure modulation were engineered for highly sensitive and selective detection of NO at room temperature. The modified EDA groups not only enable selective adsorption to significantly enrich NO molecules around the interface but also realize a favorable modulation of SnO/EDA-rGO electronic structure by increasing the Fermi level of rGO, through which the sensing performance of NO is synergistically enhanced.

2D/2D heterojunction of g-CN/SnS: room-temperature sensing material for ultrasensitive and rapid-recoverable NO detection.

Heterojunction engineering plays an indispensable role in improving gas-sensing performance. However, rational heterojunction engineering to achieve room-temperature NO sensing with both high response and rapid recovery is still a challenge. Herein, a 2D/2D heterojunction of g-CN/SnS is designed to improve the sensing performance of SnS and used for ultrasensitive and rapid-recoverable NO detection at room temperature.

SnS/SnS p-n heterojunctions with an accumulation layer for ultrasensitive room-temperature NO detection.

The unique features of SnS make it a sensitive material ideal for preparing high-performance nitrogen dioxide (NO) gas sensors. However, sensors based on pristine tin disulfide (SnS) fail to work at room temperature (RT) owing to their poor intrinsic conductivity and weak adsorptivity toward the target gas, thereby impeding their wide application. Herein, an ultrasensitive and fully recoverable room-temperature NO gas sensor based on SnS/SnS p-n heterojunctions with an accumulation layer was fabricated.

Hierarchical SnS/SnO nanoheterojunctions with increased active-sites and charge transfer for ultrasensitive NO detection.

SnS2 nanosheets with unique properties are excellent candidate materials for fabricating high-performance NO2 gas sensors. However, serious restacking and aggregation during sensor fabrication have greatly impacted the sensing response. In this study, flower-like hierarchical SnS2 was prepared by a simple microwave method and partially thermally oxidized to form hierarchical SnS2/SnO2 nanocomposites to further improve the sensing performance at low operating temperature.

Influence of the vicinal surface on the anisotropic dielectric properties of highly epitaxial BaSrTiO thin films.

Epitaxial thin films of BaSrTiO (BST) were grown on the designed vicinal single-crystal LaAlO (001) substrates to systematically investigate the evolution of microstructures and in-plane dielectric properties of the as-grown films under the strains induced by surface step terraces. Anisotropic dielectric properties were observed, which can be attributed to different tetragonalities induced by vicinal LaAlO substrates with miscut orientations along the [100] and [110] directions with different miscut angles of 1.0°, 2.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCuTiO thin films on vicinal LaAlO substrates.

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO (LAO) substrates with various miscut angles of 1.

Fabrication of C-doped WO₃ nanoparticle cluster arrays from PS-b-P4VP for room temperature H₂ sensing.

C-doped WO3 based room temperature hydrogen sensors including nanoparticle cluster arrays and nanorods were successfully prepared by a PS-b-P4VP template based method. AFM, TEM and XPS are used to characterize the structure and composition of the samples. Analyses indicate that the C-doped WO3 nanoparticle cluster arrays are arranged in a beautiful hexagonal configuration and they are interconnected by a superthin carbon film.