GaN-on-Si high-electron-mobility transistors have emerged as the next generation of high-powered and cost-effective microwave devices; however, the limited thermal conductivity of the Si substrate prevents the realization of their potential. In this paper, a GaN-on-insulator (GNOI) structure is proposed to enhance the heat dissipation ability of a GaN-on-Si HEMT. Electrothermal simulation was carried out to analyze the thermal performance of the GNOI-on-Si HEMTs with different insulator dielectrics, including SiO, SiC, AlN, and diamond.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
In this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two superlattice (SL) layers with different Al component ratios stacked in reverse order. The upper layer, with a higher Al component ratio, introduces tensile stress instead of accumulative compressive stress and reduces the in situ curvature of the wafer, thereby achieving a well-controlled wafer bow ≤ ±50 µm for a 3.
View Article and Find Full Text PDFIncipient fault detection in a hydraulic system is a challenge in the condition monitoring community. Existing research mainly monitors abnormal working conditions in hydraulic systems by separately detecting the key working parameter, which often causes a high miss warning rate for incipient faults due to the oversight of parameter dependence. A principal component analysis provides an effective method for incipient fault detection by taking the correlation of multiple parameters into consideration, but this technique assumes the systems are Gaussian-distributed, making it invalid for a dynamic non-Gaussian system.
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