Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO-based RRAM device with a vanadium electrode.

This study proposes a method for a HfO-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias.