Photoelectric Properties of GaSSe (0 ≤ ≤ 1) Layered Crystals.

In this study, the photoelectric properties of a complete series of GaSSe (0 ≤ ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaSSe as the Se composition increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaSSe to light with increasing .

Temperature-Dependent Absorption of Ternary HfSSe 2D Layered Semiconductors.

In this study, we present the investigation of optical properties on a series of HfSSe crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy.

Enhanced Optical Response of Zinc-Doped Tin Disulfide Layered Crystals Grown with the Chemical Vapor Transport Method.

Tin disulfide (SnS) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS applications, because it can increase the functionality of SnS by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS crystals was explored.