High-energy single-frequency 167 nm deep-ultraviolet laser.

We report a high-energy single-frequency deep-ultraviolet (DUV) solid-state laser at 167.079 nm by the eighth-harmonic generation of a diode-pumped Nd:LGGG laser. A maximum DUV laser output energy of 1.

167.75-nm vacuum-ultraviolet ps laser by eighth-harmonic generation of a 1342-nm Nd:YVO4 amplifier in KBBF.

We demonstrate a ps 167.75-nm vacuum-ultraviolet (VUV) laser by cascaded second-harmonic generation (SHG). The VUV laser is produced by eighth-harmonic generation (EHG) of a mode-locked ps 1342-nm Nd:YVO4 amplifier through three stages cascaded SHG with two LiB3O5 crystals and one KBe2BO3F2 crystal, successively.

7.6 W 1342 nm passively mode-locked picosecond composite Nd:YVO4/YVO4 laser with a semiconductor saturable absorber mirror.

A high average power 1342 nm passively CW mode-locked picoseconds (ps) composite Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The oscillator cavity was carefully designed to optimize the laser beam radii in the crystal and on the SESAM. The combination of composite bonded laser crystal, direct pumping, and dual end-pumped configuration was adopted to reduce the thermal effect and produce high output power with high beam quality.

Sub-pm linewidth nanosecond Nd:GYSGG laser at 1336.6 nm.

We demonstrate a sub-pm linewidth acousto-optic (AO) Q-switched nanosecond Nd:GYSGG ring laser at 1336.6 nm side-pumped by 808-nm quasi-continuous wave (QCW) diode lasers for the first time. With incident pulse energy of 4.