[A study of photoluminescence properties of Si-based CeO2/Tb4O7 superlattices].

CeO2/Tb4O7 superlattices were deposited on P type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Tb3+ ions which located around 488, 544, 588 and 623 nm were obtained after the superlattices annealing in weak reducing atmosphere at high temperature. It was indicated that CeO2 films transferred to amorphous state as the valence transition of Ce4+ --> Ce3+ which was induced by thermal annealing, the energy transfer occurred between Ce3+ ions and Tb3+ ions, and the Tb3+ ions emition could be detected after obtaining the energy from Ce3+ ions.

[Effect of Ce3+ implantation on photoluminescence intensity of Si nanocrystals embedded in superlattices].

In the present paper, SiO/SiO2 superlattices samples were prepared on Si substrates by electron beam evaporation. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, Ce3+ ions with a dose of 2.

[Deposition and structures analysis of amorphous SiNx films prepared by magnetron sputtering].

Amorphous SiNx films were deposited on p-type Si(100)substrates by magnetron sputtering technology. The samples were then detected by a Bruker Tennsor 27 Fourier transform spectrometer. One intense absorption band of the SiNx films (from 812 to 892 cm(-1)) which was assigned to the stretching vibration mode of Si--N--Si bond was detected by Fourier transform infrared (FTIR) spectroscopy.

[Photoluminescence from interface of SiO/SiO2 superlattices].

SiO/SiO2 superlattices with different thickness of SiO and SiO2 films were deposited on the Si substrates at 200 degrees C by thermo-evaporation technology. The photoluminescence (PL) spectrum centers of the samples shifted from 400 nm to 600 nm with the increase in SiO films thickness. Similar phenomena were also found when increasing the thickness of SiO2 film but forming SiO film.

[Effect of hydrogen passivation on photoluminescence intensity of Si nanocrystals].

SiO/SiO2 superlattices samples were prepared on Si substrates by reactive evaporation of SiO powder in vacuum or an oxygen atmosphere. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, H+ with a dose of 3.

[A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method].

Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors' investigation shows that Si-Oy-Si(4-y) (0 < y < or =4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing.