Publications by authors named "Shay Reboh"
Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a technique capable of full characterization, particularly their dopant distribution, in a representative (high statistics) way is still lacking. Here we propose a methodology based on Medium Energy Ion Scattering (MEIS) to address this query, allowing structural and compositional quantification of advanced 3D FinFET devices with nanometer spatial resolution.
View Article and Find Full Text PDFArticle Synopsis
- - Dark-field electron holography is a technique that allows researchers to visualize strain in crystal lattices by reconstructing phases over large areas.
- - This study uses dynamic scattering theory to explore the relationship between lattice strain and reconstructed phases through both analytical and numerical methods.
- - The researchers created efficient rules for calculating reconstructed phases from 3D strain fields, which help analyze the effects of parameters like strain magnitude, specimen thickness, and more.