Memristive Devices from CuO Nanoparticles.

Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR).

Effective Modulation of Optical and Photoelectrical Properties of SnS Hexagonal Nanoflakes via Zn Incorporation.

Tin sulfides are promising materials in the fields of photoelectronics and photovoltaics because of their appropriate energy bands. However, doping in SnS can improve the stability and robustness of this material in potential applications. Herein, we report the synthesis of SnS nanoflakes with Zn doping via simple hydrothermal route.

Highly Sensitive Flexible Photodetectors Based on Self-Assembled Tin Monosulfide Nanoflakes with Graphene Electrodes.

Tin monosulfide (SnS) nanostructures have attracted huge attention recently because of their high absorption coefficient, high photoconversion efficiencies, low energy cost, ease of deposition, and so on. Here, in this paper, we report on the low-cost hydrothermal synthesis of the self-assembled SnS nanoflake-like structures in terms of performance for the photodetectors. High-performance photodetectors were fabricated using SnS nanoflakes as active layers and graphene as the lateral electrodes.

The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures.

We have presented a study of the bipolar resistance switching characteristics in the Ag/ZnO/Pt cell. This switching is accompanied by a change in intensity of the photoluminescence emission at 3.33 eV which is attributed to zinc vacancy related transitions in ZnO film.

Photovoltaic device on a single ZnO nanowire p-n homojunction.

A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions.