Defective ZrSe: a promising candidate for spintronics applications.

The current study presents the electronic and magnetic properties of monolayer ZrSenanoribbons. The impact of various point defects in the form of Zr or Se vacancies, and their combinations, on the nanoribbon electronic and magnetic properties are investigated using density functional theory calculations in hydrogen-terminated zigzag and armchair ZrSenanoribbons. Although pristine ZrSeis non-magnetic, all the defective ZrSestructures exhibit ferromagnetic behavior.