Comparative Analysis of Thin and Thick MoTe Photodetectors: Implications for Next-Generation Optoelectronics.

Due to its outstanding optical and electronic properties, molybdenum ditelluride (MoTe) has become a highly regarded material for next-generation optoelectronics. This study presents a comprehensive, comparative analysis of thin (8 nm) and thick (30 nm) MoTe-based photodetectors to elucidate the impact of thickness on device performance. A few layers of MoTe were exfoliated on a silicon dioxide (SiO) dielectric substrate, and electrical contacts were constructed via EBL and thermal evaporation.