Wafer-Level Self-Packaging Design and Fabrication of MEMS Capacitive Pressure Sensors.

This paper reports a MEMS capacitive pressure sensor (CPS) based on the operating principle of touch mode. The CPS was designed and fabricated using wafer-level self-packaged MEMS processes. The variable capacitance sensing structure was vacuum-sealed in a cavity using the Si-glass anodic bonding technique, and the embedded Al feedthrough lines at the Si-glass interface were used to realize the electrical connections between the parallel plate electrodes and the electrode pads through Al vias.

Mixed-gas CH/CO/CO detection based on linear variable optical filter and thermopile detector array.

This paper presents the design, fabrication, and characterization of a middle-infrared (MIR) linear variable optical filter (LVOF) and thermopile detectors that will be used in a miniaturized mixed gas detector for CH/CO/CO measurement. The LVOF was designed as a tapered-cavity Fabry-Pérot optical filter, which can transform the MIR continuous spectrum into multiple narrow band-pass spectra with peak wavelength in linear variation. Multi-layer dielectric structures were used to fabricate the Bragg reflectors on the both sides of tapered cavity as well as the antireflective film combined with the function of out-of-band rejection.

Fabrications of L-band LiNbO-based SAW Resonators for Aerospace Applications.

High frequency surface acoustic wave (SAW) technology offers many opportunities for aerospace applications in passive wireless sensing and communication. This paper presents the design, simulation, fabrication, and test of an -band SAW resonator based on 128° Y-X LiNbO substrate. The design parameters of SAW resonator were optimized by the finite element (FEM) method and the coupling-of-mode (COM) theory.

Novel H⁺-Ion Sensor Based on a Gated Lateral BJT Pair.

An H⁺-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials.