Study of the Solder Characteristics of IGBT Modules Based on Thermal-Mechanical Coupling Simulation.

The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. The main characteristics of its operating environment are high voltage, large current, and high power density, which can easily cause issues, such as thermal stress, thermal fatigue, and mechanical stress. Therefore, the reliability of IGBT module packaging has become a critical research topic.