Using Mosaicity to Tune Thermal Transport in Polycrystalline Aluminum Nitride Thin Films.

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality.

High-Output Lead-Free Flexible Piezoelectric Generator Using Single-Crystalline GaN Thin Film.

Piezoelectric generators (PEGs) are a promising power source for future self-powered electronics by converting ubiquitous ambient mechanical energy into electricity. However, most of the high-output PEGs are made from lead zirconate titanate, in which the hazardous lead could be a potential risk to both humans and environment, limiting their real applications. III-Nitride (III-N) can be a potential candidate to make stable, safe, and efficient PEGs due to its high chemical stability and piezoelectricity.

Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.

We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO. As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO.

High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm/V·s and saturation current, I/l > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs.