Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel.

The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1-8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and I/I ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure.