Indirect-To-Direct Bandgap Crossover and Room-Temperature Valley Polarization of Multilayer MoS Achieved by Electrochemical Intercalation.

Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin-orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin-valley locking in K or K' valleys, the ultra-short valley lifetime limits their room-temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure.

Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe via Tellurization.

Platinum ditelluride (1-PtTe) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods.

Measurement of spin-orbit torque using field counterbalancing in radial current geometry.

Controlling the direction of magnetization with an electric current, rather than a magnetic field, is a powerful technique in spintronics. Spin-orbit torque, which generates an effective magnetic field from the injected current, is a promising method for this purpose. Here we show an approach for quantifying the magnitude of spin-orbit torque from a single magnetic image.

Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy.

The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced.

Magnetic Field Magnitudes Needed for Skyrmion Generation in a General Perpendicularly Magnetized Film.

Due to its topological protection, the magnetic skyrmion has been intensively studied for both fundamental aspects and spintronics applications. However, despite recent advancements in skyrmion research, the deterministic creation of isolated skyrmions in a generic perpendicularly magnetized film is still one of the most essential and challenging techniques. Here, we present a method to create magnetic skyrmions in typical perpendicular magnetic anisotropy (PMA) films by applying a magnetic field pulse and a method to determine the magnitude of the required external magnetic fields.

Universal Hopping Motion Protected by Structural Topology.

A scaling law elucidates the universality in nature, presiding over many physical phenomena which seem unrelated. Thus, exploring the universality class of scaling law in a particular system enlightens its physical nature in relevance to other systems and sometimes unearths an unprecedented new dynamic phase. Here, the dynamics of weakly driven magnetic skyrmions are investigated, and its scaling law is compared with the motion of a magnetic domain wall (DW) creep.

Reversible magnetic spiral domain.

The various spiral structures that exist in nature inspire humanity because of their morphological beauty, and spiral structures are used in various fields, including architecture, engineering, and art. Spiral structures have their own winding directions, and in most spirals, it is difficult to reverse the predetermined winding direction. Here, we show that a rotating spiral exists in magnetic systems for which the winding direction can be easily reversed.

Electrical Generation and Deletion of Magnetic Skyrmion-Bubbles via Vertical Current Injection.

The magnetic skyrmion is a topologically protected spin texture that has attracted much attention as a promising information carrier because of its distinct features of suitability for high-density storage, low power consumption, and stability. One of the skyrmion devices proposed so far is the skyrmion racetrack memory, which is the skyrmion version of the domain-wall racetrack memory. For application in devices, skyrmion racetrack memory requires electrical generation, deletion, and displacement of isolated skyrmions.

Programmable Dynamics of Exchange-Biased Domain Wall via Spin-Current-Induced Antiferromagnet Switching.

Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion-based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in-plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure.

Highly Surface-Embossed Polydimethylsiloxane-Based Triboelectric Nanogenerators with Hierarchically Nanostructured Conductive Ni-Cu Fabrics.

Wearable fabric-based energy harvesters have continued to gain importance for use in portable consumer electronics as an ecofriendly energy source that is independently self-powered by various activities. Herein, we address the output features of highly flexible Ni-Cu fabric-based triboelectric nanogenerators (F-TENG) employing surface-embossed polydimethylsiloxane (SE-PDMS) layers, as a crucial approach for enhancing power generation. Such SE-PDMS configurations were achieved via control of the ZnO nanowire (NW) and nanoflake (NF) frames initially prepared on bare Ni-Cu fabrics by a hydrothermal approach.

In-plane direct current probing for spin orbit torque-driven effective fields in perpendicularly magnetized heavy metal/ferromagnet/oxide frames.

Electrical manipulation of magnetization states has been the subject of intense focus as it is a long-standing goal in the emerging field of spintronics. In particular, torque generated by an in-plane current with a strong spin-orbit interaction shows promise for control of the adjacent ferromagnetic state in heavy-metal/ferromagnet/oxide frames. Thus, the ability to unlock precise spin orbit torque-driven effective fields represents one of the key approaches in this work.

Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO bipolar resistive switching.

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states.

Thermally robust perpendicular Co/Pd-based synthetic antiferromagnetic coupling enabled by a W capping or buffer layer.

Perpendicularly magnetized tunnel junctions (p-MTJs) that contain synthetic antiferromagnetic (SAF) frames show promise as reliable building blocks to meet the demands of perpendicular magnetic anisotropy (PMA)-based spintronic devices. In particular, Co/Pd multilayer-based SAFs have been widely employed due to their outstanding PMA features. However, the widespread utilization of Co/Pd multilayer SAFs coupled with an adjacent CoFeB reference layer (RL) is still a challenge due to the structural discontinuity or intermixing that occurs during high temperature annealing.

Ultrathin W space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame.

Perpendicularly magnetized tunnel junctions (p-MTJs) show promise as reliable candidates for next-generation memory due to their outstanding features. However, several key challenges remain that affect CoFeB/MgO-based p-MTJ performance. One significant issue is the low thermal stability (Δ) due to the rapid perpendicular magnetic anisotropy (PMA) degradation during annealing at temperatures greater than 300 °C.