Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS Field-Effect Transistors with Buried Local Back-Gate Structure.

The impact of radiation on MoS-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS field-effect transistors with buried local back-gate structures were investigated, and their related effects on AlO gate dielectrics and MoS/AlO interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation.

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS FETs Using Buried-Gate Structures.

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS transistors on a silicon substrate can lead to the degradation of electrical characteristics.

A Bioinspired Ultra Flexible Artificial van der Waals 2D-MoS Channel/LiSiO Solid Electrolyte Synapse Arrays via Laser-Lift Off Process for Wearable Adaptive Neuromorphic Computing.

Wearable electronic devices with next-generation biocompatible, mechanical, ultraflexible, and portable sensors are a fast-growing technology. Hardware systems enabling artificial neural networks while consuming low power and processing massive in situ personal data are essential for adaptive wearable neuromorphic edging computing. Herein, the development of an ultraflexible artificial-synaptic array device with concrete-mechanical cyclic endurance consisting of a novel heterostructure with an all-solid-state 2D MoS channel and LiSiO (lithium silicate) is demonstrated.

Robust 2D MoS Artificial Synapse Device Based on a Lithium Silicate Solid Electrolyte for High-Precision Analogue Neuromorphic Computing.

High-precision artificial synaptic devices compatible with existing CMOS technology are essential for realizing robust neuromorphic hardware systems with reliable parallel analogue computation beyond the von Neumann serial digital computing architecture. However, critical issues related to reliability and variability, such as nonlinearity and asymmetric weight updates, have been great challenges in the implementation of artificial synaptic devices in practical neuromorphic hardware systems. Herein, a robust three-terminal two-dimensional (2D) MoS artificial synaptic device combined with a lithium silicate (LSO) solid-state electrolyte thin film is proposed.