Theoretical understanding of the in-plane tensile strain effects on enhancing the ferroelectric performance of HfZrO and ZrO thin films.

In-plane tensile strain was reported to enhance the ferroelectricity of HfZrO thin films by promoting the formation of a polar orthorhombic (PO-) phase. However, its origin remains yet to be identified unambiguously, although a strain-related thermodynamic stability variation was reported. This work explores the kinetic effects that have been overlooked to provide a precise answer to the problem, supplementing the thermodynamic calculations.

Predicting periprosthetic joint infection: external validation of preoperative prediction models.

: Prediction models for periprosthetic joint infections (PJIs) are gaining interest due to their potential to improve clinical decision-making. However, their external validity across various settings remains uncertain. This study aimed to externally validate promising preoperative PJI prediction models in a recent multinational European cohort.

Study of a charge transition-driven resistive switching mechanism in TiO-based random access memory density functional theory.

The nature of the conducting filament (CF) with a high concentration of oxygen vacancies (Vs) in oxide thin film-based resistive random access memory (RRAM) remains unclear. The Vs in the CF have been assumed to be positively charged (V) to explain the field-driven switching of RRAM, but V clusters in high concentration encounter Coulomb repulsion, rendering the CF unstable. Therefore, this study examined the oxidation state of Vs in the CF and their effects on the switching behavior density functional theory calculations using a Pt/TiO/Ti model system.

Differential impact of serum total bilirubin level on cerebral atherosclerosis and cerebral small vessel disease.

Background: A low serum total bilirubin (T-bil) level is associated with an increased risk of atherosclerosis. However, the differential impact of the serum T-bil level on cerebral atherosclerosis and cerebral small vessel disease (SVD) is still unclear.

Methods: We evaluated serum T-bil levels from 1,128 neurologically healthy subjects.

Effect of lightly doped drain structure on P-channel metal induced lateral crystallization thin film transistors.

A Lightly Doped Drain (LDD) structure is known to be very effective in preventing hot electrons in modern NMOS transistors. In this work, the lightly doped region was formed in poly TFT by using a separate LDD mask aligned to a gate mask. The misalignment can be calculated to be about 1.