Publications by authors named "Seunghwan Yeon"
Article Synopsis
- The study reports that etching the surface of GaN-based green LEDs with H3PO4 solution enhances their optical and electrical properties.
- By varying the etching time from 0 to 20 minutes, researchers were able to control the size and density of nano-sized etch pits, improving light extraction efficiency due to better photon escape angles.
- However, excessive etching beyond 5 minutes led to increased leakage current and degraded electrical performance due to larger etch pit densities.
We report the enhancement of the photoluminescence (PL) intensity of GaN-based light-emitting diode (LED) structures by using of a surface coating of polystyrene (PS)/silica (SiO2) core-shell nanospheres. PS/SiO2 core-shell nanosphere-coated LEDs show the highest PL intensity among various type LEDs. The relative PL intensity of PS/SiO2 core-shell nanosphere-coated LEDs increased by 10% and 14% compared with that of LEDs coated with only SiO2 nanospheres and conventional LEDs without any nanostructures, respectively.
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