Lipid Droplet Surface Promotes 3D Morphological Evolution of Non-Rhomboidal Cholesterol Crystals.

Cholesterol crystals, which cause inflammation and various diseases, predominantly grow in a platy, rhomboid structure on the plasma membranes but exhibit an uneven three-dimensional (3D) architecture intracellularly. Here, it is demonstrated how cholesterol crystallizes in a non-rhomboidal shape on the surface of lipid droplets and develops into 3D sheet-like agglomerates using an in vitro lipid droplet reconstitution system with stereoscopic fluorescence imaging. The findings reveal that interfacial cholesterol transport on the lipid droplet surface and unique lipid droplet components significantly influence the nucleation-and-growth dynamics of cholesterol crystals, leading to crystal growth in various polygonal shapes.

A facile method for separating fine water droplets dispersed in oil through a pre-wetted mesh membrane.

To achieve the successful separation of emulsions containing fine dispersed droplets and low volume fractions, a membrane with pore sizes comparable to or smaller than the droplet size is typically required. Although this approach is effective, its utilization is limited to the separation of emulsions with relatively large droplets. To overcome this limitation, a secondary membrane can be formed on the primary membrane to reduce pore size, but this can also be time-consuming and costly.

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices.

The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (AlO) thin films for high-performance OTFTs. Nanocluster-based AlO films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based AlO films.

In-Plane Amorphous Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces.

Here, we demonstrate a side-gated in-plane structure of solution-processed amorphous oxide semiconductor ionotronic devices and logic circuits enabled by ion gel gate dielectrics with a monolithically integrated nanoscale passivation architecture. The large capacitance of the electric double layer (EDL) in the ion gel allows a device structure to be a side gate geometry, forming an in-plane structured amorphous In-Ga-Zn-O (-IGZO) ionotronic transistor, which can be translated into a simplified logic gate configuration with a low operation voltage. Particularly, the monolithic passivation of the coplanar electrodes offers advantages over conventional inhomogeneous passivation, mitigating unintentional parasitic leakage current through the ion gel dielectric layer.

Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation.

The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrated to fulfill highly robust and ultraflexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) and integrated circuits. The photochemically activated combustion sol-gel a-IGZO TFTs on a mesa-structured polyimide show an average saturation mobility of 6.

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.

For the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems.