Extreme ultraviolet (EUV) lithography uses reflective optics and a thick mask absorber, leading to mask 3D (M3D) effects. These M3D effects cause disparities in the amplitudes and phases of EUV mask diffractions, impacting mask imaging performance and reducing process yields. Our findings demonstrate that wrinkles in the EUV pellicle can exacerbate M3D effects.
View Article and Find Full Text PDFExtreme ultraviolet (EUV) pellicles must have an EUV reflectance (EUVR) below 0.04% to prevent the reduction of critical dimension (CD). However, pellicle wrinkles cause localized CD variation by locally amplifying the EUVR.
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