Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS light absorbing layer.

We report an enhancement of near-infrared (NIR) detectability from amorphous InGaZnO (α-IGZO) thin film transistor in conjunction with randomly distributed molybdenum disulfide (MoS) flakes. The electrical characteristics of the α-IGZO grown by radio-frequency magnetron sputtering exhibit high effective mobility exceeding 15 cm V s and current on/off ratio up to 10. By taking advantages of the high quality α-IGZO and MoS light absorbing layer, photodetection spectra are able to extend from ultra-violet to NIR range.

Electrical and photovoltaic properties of residue-free MoS thin films by liquid exfoliation method.

Molybdenum disulfide (MoS) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS film thickness could be controlled by centrifuge condition in the range of 20 ∼ 40 nm, and its carrier concentration and mobility were measured at about 7.