Publications by authors named "Seung Jae Yu"
Micromachines (Basel)
December 2020
Article Synopsis
- The study explores how different channel shapes of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) influence device stability, using various designs like zigzag, circular, and U-type.
- Systematic electrical tests reveal that lateral electric field effects play a critical role in device instability, particularly in zigzag-shaped transistors, while vertical electric field effects and source/drain asymmetry have minimal impact.
- The charge trapping time for zigzag a-IGZO TFTs is significantly shorter than for other shapes, indicating that local electric field enhancements affect reliability, with TCAD simulations confirming these findings and showing a correlation with channel geometry.
