Geometrical Doping at the Atomic Scale in Oxide Quantum Materials.

Chemical dopants enabling a plethora of emergent physical properties have been treated as randomly and uniformly distributed in the frame of a three-dimensional doped system. However, in nanostructured architectures, the location of dopants relative to the interface or boundary can greatly influence device performance. This observation suggests that chemical dopants need to be considered as discrete defects, meaning that geometric control of chemical dopants becomes a critical aspect as the physical size of materials scales down into the nanotechnology regime.

Doping-dependent superconducting physical quantities of K-doped BaFe[Formula: see text]As[Formula: see text] obtained through infrared spectroscopy.

We investigated four single crystals of K-doped BaFe[Formula: see text]As[Formula: see text] (Ba-122), Ba[Formula: see text]K[Formula: see text]Fe[Formula: see text]As[Formula: see text] with [Formula: see text] 0.29, 0.36, 0.

Rotational coherence of encapsulated ortho and para water in fullerene-C revealed by time-domain terahertz spectroscopy.

We resolve the real-time coherent rotational motion of isolated water molecules encapsulated in fullerene-C cages by time-domain terahertz (THz) spectroscopy. We employ single-cycle THz pulses to excite the low-frequency rotational motion of water and measure the subsequent coherent emission of electromagnetic waves by water molecules. At temperatures below ~ 100 K, C lattice vibrational damping is mitigated and the quantum dynamics of confined water are resolved with a markedly long rotational coherence, extended beyond 10 ps.

Revealing excess protons in the infrared spectrum of liquid water.

The most common species in liquid water, next to neutral [Formula: see text] molecules, are the [Formula: see text] and [Formula: see text] ions. In a dynamic picture, their exact concentrations depend on the time scale at which these are probed. Here, using a spectral-weight analysis, we experimentally resolve the fingerprints of the elusive fluctuations-born short-living [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text] ions in the IR spectra of light ([Formula: see text]), heavy ([Formula: see text]), and semi-heavy (HDO) water.

Temperature-dependent optical properties of self-doped superconducting Fe-pnictide, SrVOFeAs.

We performed an infrared spectroscopic study on a single crystal of SrVOFeAs grown by a self-flux method. This layered material system consists of two alternative layers of [SrVO] and [SrFeAs]. Since the typical size of single crystalline SrVOFeAs samples is 200 [Formula: see text] 200 [Formula: see text] 10 [Formula: see text]m an optical study on this material is challenging.

Directing Oxygen Vacancy Channels in SrFeO Epitaxial Thin Films.

Transition-metal oxides (TMOs) with brownmillerite (BM) structures possess one-dimensional oxygen vacancy channels (OVCs), which play a key role in realizing high ionic conduction at low temperatures. The controllability of the vacancy channel orientation, thus, possesses a great potential for practical applications and would provide a better visualization of the diffusion pathways of ions in TMOs. In this study, the orientations of the OVCs in BM-SrFeO are stabilized along two crystallographic directions of the epitaxial thin films.

Topotactic Metal-Insulator Transition in Epitaxial SrFeO Thin Films.

Topotactic phase transformation enables structural transition without losing the crystalline symmetry of the parental phase and provides an effective platform for elucidating the redox reaction and oxygen diffusion within transition metal oxides. In addition, it enables tuning of the emergent physical properties of complex oxides, through strong interaction between the lattice and electronic degrees of freedom. In this communication, the electronic structure evolution of SrFeO epitaxial thin films is identified in real-time, during the progress of reversible topotactic phase transformation.

Phase transitions via selective elemental vacancy engineering in complex oxide thin films.

Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies.