Ammonia oxidation by in-situ chloride electrolysis in etching wastewater of semiconductor manufacturing using RuSnO/Ti electrode: Effect of plating mode and metal ratio.

The indirect chloride-mediated ammonia oxidation encounters challenges in maintaining the effectiveness of metal oxide anodes when treating wastewaters with complex compositions. This study aims to develop a highly stable anode with RuO-SnO coatings for treating an etching effluent from semiconductor manufacturing, which majorly contains NH and organic compounds. The RuSnO/Ti electrode was synthesized using wet impregnation and calcination processes.