Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO.

The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO-film is investigated. SiNPs were formed by implantation of 70 keV Si and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10-10 cm were employed for irradiation of the implanted samples prior to the thermal annealing.