Transient Localization from the Interaction with Quantum Bosons.

We carefully revisit the electron-boson scattering problem, going beyond weak-coupling expansions and popular semiclassical treatments. By providing numerically exact results valid at finite temperatures, we demonstrate the existence of a broad regime of electron-boson scattering where quantum localization processes become relevant despite the absence of extrinsic disorder. Localization in the Anderson sense is caused by the dynamical randomness resulting from a large thermal boson population, being, however, effective only at transient times before diffusion can set in.

Universal Scaling near Band-Tuned Metal-Insulator Phase Transitions.

We present a theory for band-tuned metal-insulator transitions based on the Kubo formalism. Such a transition exhibits scaling of the resistivity curves in the regime where Tτ>1 or μτ>1, where τ is the scattering time and μ the chemical potential. At the critical value of the chemical potential, the resistivity diverges as a power law, R_{c}∼1/T.

Design of auxiliary systems for spectroscopy.

The Kohn-Sham system is the prototypical example of an auxiliary system that targets, in principle exactly, an observable like the electronic density without the need to calculate the complicated many-body wavefunction. Although the Kohn-Sham system does not describe excited-state properties directly, it also represents a very successful strategy guideline for many spectroscopy applications. Here we propose a generalization of the Kohn-Sham idea.

Inhomogeneous dynamical mean-field theory of the small polaron problem.

We present an inhomogeneous dynamical mean field theory (I-DMFT) that is suitable to investigate electron-lattice interactions in non-translationally invariant and/or inhomogeneous systems. The presented approach, whose only assumption is that of a local, site-dependent self-energy, recovers both the exact solution of an electron for a generic random tight-binding Hamiltonian in the non-interacting limit and the DMFT solution for the small polaron problem in translationally invariant systems. To illustrate its full capabilities, we use I-DMFT to study the effects of defects embedded on a two-dimensional surface.

Disorder-Driven Metal-Insulator Transitions in Deformable Lattices.

We show that, in the presence of a deformable lattice potential, the nature of the disorder-driven metal-insulator transition is fundamentally changed with respect to the noninteracting (Anderson) scenario. For strong disorder, even a modest electron-phonon interaction is found to dramatically renormalize the random potential, opening a mobility gap at the Fermi energy. This process, which reflects disorder-enhanced polaron formation, is here given a microscopic basis by treating the lattice deformations and Anderson localization effects on the same footing.

Robustness of Rashba and Dirac Fermions against Strong Disorder.

By addressing the interplay between substitutional disorder and spin-orbit-coupling in chalcogenide alloys, we predict a strong robustness of spectral features at the Fermi energy. Indeed, supplementing our state of the art first-principles calculations with modeling analysis, we show that the disorder self-energy is vanishingly small close to the band gap, thus i) allowing for bulk Rashba-like spin splitting to be observed in ferroelectric alloys by means of Angle Resolved PhotoEmission Spectroscopy, and ii) protecting the band-character inversion related to the topological transition in recently discovered Topological Crystalline Insulators. Such a protection against strong disorder, which we demonstrate to be general for three dimensional Dirac systems, has potential and valuable implications for novel technologies, as spintronics and/or spinorbitronics.

Tailoring the molecular structure to suppress extrinsic disorder in organic transistors.

In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents - thereby reducing potential fluctuations in the transistor channel and increasing the mobility in the activated regime - without altering the intrinsic transport properties.