High optical gain in erbium-doped potassium double tungstate channel waveguide amplifiers.

We report on the optical-gain properties of channel waveguides patterned into lattice-matched KGdxLuyErxy(WO) layers grown onto undoped KY(WO) substrates by liquid phase epitaxy. A systematic investigation of gain is performed for five different Er concentrations in the range of 0.75 to 10at.

Temperature-dependent absorption and emission of potassium double tungstates with high ytterbium content.

We study the spectroscopic properties of thin films of potassium ytterbium gadolinium double tungstates, KYbGd(WO), and potassium ytterbium lutetium double tungstates, KYbLu(WO), specifically at the central absorption line near 981 nm wavelength, which is important for amplifiers and lasers. The absorption cross-section of both thin films is found to be similar to those of bulk potassium rare-earth double tungstates, suggesting that the crystalline layers retain their spectroscopic properties albeit having >50 at.% Yb concentration.

Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.