AgS QDs/Si Heterostructure-Based Ultrasensitive SWIR Range Detector.

In the 20 century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in AgS QD/Si heterostructures in the short-wave infrared range.