Setting Plasma Immersion Ion Implantation of Ar Parameters towards Electroforming-Free and Self-Compliance HfO-Based Memristive Structures.

Memristive structures are among the most promising options to be components of neuromorphic devices. However, the formation of HfO-based devices in crossbar arrays requires considerable time since electroforming is a single stochastic operation. In this study, we investigate how Ar plasma immersion ion implantation (PI) affects the Pt/HfO (4 nm)/HfOXNY (3 nm)/TaN electroforming voltage.