Nanomaterials (Basel)
December 2022
The major issues confronting the performance of deep-UV (DUV) laser diodes (LDs) are reviewed along with the different approaches aimed at performance improvement. The impact of threading dislocations on the laser threshold current, limitations on heavy n- and p-doping in Al-rich AlGaN alloys, unavoidable electron leakage into the p-layers of (0001) LD structures, implementation of tunnel junctions, and non-uniform hole injection into multiple quantum wells in the active region are discussed. Special attention is paid to the current status of n- and p-type doping and threading dislocation density reduction, both being the factors largely determining the performance of DUV-LDs.
View Article and Find Full Text PDFVanadium dioxide (VO) has been proposed as a phase-change material in tunable photonic and optoelectronic devices. In such devices, a thin layer of VO is typically deposited on metallic or insulating surfaces. In this Letter, we report the reflectance spectra of a subwavelength structure consisting of a thin layer of VO deposited on a gold film in the near-infrared spectral range, particularly near the wavelength of 1550 nm, which is significant for telecommunication applications.
View Article and Find Full Text PDFA systematic study of titanium dioxide (TiO2) nanotubes (NTs) grown by electrochemical anodization in NH4F + glycerol electrolyte has been carried out in a broad range of anodization voltage of 5-350 V and acid concentration of 0.1-0.7 wt%.
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