Synergistic roles of vapor- and liquid-phase epitaxy in the seed-mediated synthesis of substrate-based noble metal nanostructures.

Colloidal growth modes reliant on the replication of the crystalline character of a preexisting seed through homoepitaxial or heteroepitaxial depositions have enriched both the architectural diversity and functionality of noble metal nanostructures. Equivalent syntheses, when practiced on seeds formed on a crystalline substrate, must reconcile with the fact that the substrate enters the syntheses as a chemically distinct bulk-scale component that has the potential to impose its own epitaxial influences. Herein, we provide an understanding of the formation of epitaxial interfaces within the context of a hybrid growth mode that sees substrate-based seeds fabricated at high temperatures in the vapor phase on single-crystal oxide substrates and then exposed to a low-temperature liquid-phase synthesis yielding highly faceted nanostructures with a single-crystal character.

Large-area periodic arrays of gold nanostars derived from HEPES-, DMF-, and ascorbic-acid-driven syntheses.

With arms radiating from a central core, gold nanostars represent a unique and fascinating class of nanomaterials from which extraordinary plasmonic properties are derived. Despite their relevance to sensing applications, methods for fabricating homogeneous populations of nanostars on large-area planar surfaces in truly periodic arrays is lacking. Herein, the fabrication of nanostar arrays is demonstrated through the formation of hexagonal patterns of near-hemispherical gold seeds and their subsequent exposure to a liquid-state chemical environment that is conducive to colloidal nanostar formation.

Plasmon-Mediated Synthesis of Periodic Arrays of Gold Nanoplates Using Substrate-Immobilized Seeds Lined with Planar Defects.

The seed-mediated growth of noble metal nanostructures with planar geometries requires the use of seeds lined with parallel stacking faults so as to provide a break in symmetry in an otherwise isotropic metal. Although such seeds are now routinely synthesized using colloidal pathways, equivalent pathways have not yet been reported for the fabrication of substrate-based seeds with the same internal defect structures. The challenge is not merely to form seeds with planar defects but to do so in a deterministic manner so as to have stacking faults that only run parallel to the substrate surface while still allowing for the lithographic processes needed to regulate the placement of seeds.

Crystal Structure of Individual CsPbBr Perovskite Nanocubes.

The atomic structure of CsPbBr nanocubes (NCs) was studied at the single-particle level via a high-resolution transmission electron microscopy (HRTEM) defocus-series analysis. The technique entails acquiring lattice-resolved HRTEM images of individual NCs over progressive defocus values. CsPbBr NC atomic structure was evaluated by comparing acquired experimental data to simulated lattice-resolved images and corresponding Fourier transform patterns of both orthorhombic ( Pnma) and cubic ( Pm3̅m) CsPbBr polymorphs.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN).

Origin of the Size-Dependent Stokes Shift in CsPbBr Perovskite Nanocrystals.

The origin of the size-dependent Stokes shift in CsPbBr nanocrystals (NCs) is explained for the first time. Stokes shifts range from 82 to 20 meV for NCs with effective edge lengths varying from ∼4 to 13 nm. We show that the Stokes shift is intrinsic to the NC electronic structure and does not arise from extrinsic effects such as residual ensemble size distributions, impurities, or solvent-related effects.

Electrochemical synthesis to convert a Ag film into Ag nanoflowers with high electrocatalytic activity.

The cyclic scanning electrodeposition method was proposed to convert a thin Ag film into nanocrystals (NCs) with various shapes including nanoflowers, nanorods, dendrites, decahedrons, and icosahedrons. The flower-like Ag NCs exhibit a remarkably enhanced catalytic activity for electro-oxidation of glucose.

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS2 and MoS2 by metalorganic vapour phase epitaxy.

Growth of multiple WS2/SnS layered semiconductor heterojunctions.

Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers of each of these materials using atomic layer deposition on 5 cm × 5 cm substrates. Initially, WS2 and SnS films were grown and characterized separately.

Hybrid InGaAs quantum well-dots nanostructures for light-emitting and photo-voltaic applications.

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers of In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition.

Irradiation-enhanced reactivity of multilayer Al/Ni nanomaterials.

We have investigated the effect of accelerated ion beam irradiation on the structure and reactivity of multilayer sputter deposited Al/Ni nanomaterials. Carbon and aluminum ion beams with different charge states and intensities were used to irradiate the multilayer materials. The conditions for the irradiation-assisted self-ignition of the reactive materials and corresponding ignition thresholds for the beam intensities were determined.