Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography.

Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent progress in inorganic metal-oxide-based photoresists, with a focus on their applications in EUVL. The unique properties of zinc-based, tin-oxygen, and IVB group inorganic photoresists are examined, showcasing their enhanced chemical reactivity and precise patterning capabilities.