Publications by authors named "Sera Jeon"

Implantable medical devices (IMDs) provide practical approaches to monitor physiological parameters, diagnose diseases, and aid treatment. However, device installation, maintenance, and long-term implantation increase the risk of infection with conventional IMDs. Therefore, medical devices with biocompatibility, controllability, and miniaturization are highly demandable.

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A bioadhesive triboelectric nanogenerator (BA-TENG), as a first-aid rescue for instant and robust wound sealing and ultrasound-driven accelerated wound healing, is designed. This BA-TENG is fabricated with biocompatible materials, and integrates a flexible TENG as the top layer and bioadhesive as the bottom layer, resulting in effective electricity supply and strong sutureless sealing capability on wet tissues. When driven by ultrasound, the BA-TENG can produce a stable voltage of 1.

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Reduced graphene oxide (RGO) obtained from graphene oxide has received much attention because of its simple and cost-effective manufacturing process. Previous studies have demonstrated the scalable production of RGO with relatively high quality; however, irreducible defects on RGO deteriorate the unique intrinsic physical properties of graphene, such as high-mobility electrical charge transport, limiting its potential applicability. Using the enhanced chemical reactivity of such defects, atomic layer deposition (ALD) can be a useful method to selectively passivate the defect sites.

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Piezoelectricity crystallographically exists only in the in-plane direction in two-dimensional transition metal dichalcogenides. Here, we demonstrated flexoelectricity-tunable out-of-plane piezoelectricity in semiconducting 2H-MoTe flakes by creating surface corrugation. In particular, the strong out-of-plane piezoelectricity and its spatial variation depending on local flexoelectricity was observed even though crystallographically there exists only in-plane piezoelectricity.

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Chemical treatment using bis(trifluoromethane) sulfonimide (TFSI) was shown to be particularly effective for increasing the photoluminescence (PL) of monolayer (1L) MoS, suggesting a convenient method for overcoming the intrinsically low quantum yield of this material. However, the underlying atomic mechanism of the PL enhancement has remained elusive. Here, we report the microscopic origin of the defect healing observed in TFSI-treated 1L-MoS through a correlative combination of optical characterization and atomic-scale scanning transmission electron microscopy, which showed that most of the sulfur vacancies were directly repaired by the extrinsic sulfur atoms produced from the dissociation of TFSI, concurrently resulting in a significant PL enhancement.

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