Broadband optoelectronics, which extend from the UV to IR regions, are crucial for imaging, autonomous driving, and object recognition. In particular, photon detection efficiency relies significantly on semiconductor properties, such as absorption coefficients and electron-hole pair generation rate, which can be optimized by designing a suitable p-n junction. In this study, we devise giant PbS colloidal quantum dots (G-PbS CQDs) that exhibit high absorption coefficients and broadband absorption.
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