Rapid Annealing of Cu-In-Ga-Se Precursors by Electron Beam Irradiation Method.

Cu-In-Ga-Se precursors were prepared by RF- and DC-sputtering methods and then irradiated with an in-situ electron beam irradiation unit. Ternary (In,Ga)Se2 and binary CuSe targets were simultaneously used for preparation of precursors. The electron dose and irradiation time were kept constant at 300 seconds and 200 W of RF power, respectively, while intensities of accelerated electrons were varied from 2.