Publications by authors named "Seongjin Ahn"

We employed infrared scattering-type scanning near-field optical microscopy (IR-sSNOM) to study surface plasmon polaritons (SPPs) in trilayer graphene (TLG). Our study reveals systematic differences in near-field IR spectra and SPP wavelengths between Bernal (ABA) and rhombohedral (ABC) TLG domains on SiO, which can be explained by stacking-dependent intraband conductivities. We also observed that the SPP reflection profiles at ABA-ABC boundaries could be mostly accounted for by an idealized domain boundary defined by the conductivity discontinuity.

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Due to COVID-19, numerous new technologies are being implemented in education, with a growing interest in the metaverse. The term "metaverse" refers to an immersive digital environment where one can interact with virtual avatars. This study aims to analyze the experiences and attitudes of the metaverse for learner-centered education from a constructivist perspective to determine how closely related this virtual environment is to the lives of elementary school students.

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The propagation of electrons in an orbital multiplet dispersing on a lattice can support anomalous transport phenomena deriving from an orbitally induced Berry curvature. In striking contrast to the related situation in graphene, we find that anomalous transport for an L=1 multiplet on the primitive 2D triangular lattice is activated by easily implemented on site and optically tunable potentials. We demonstrate this for dynamics in a Bloch band where point degeneracies carrying opposite winding numbers are generically offset in energy, allowing both an anomalous charge Hall conductance with the sign selected by off-resonance coupling to circularly polarized light and a related anomalous orbital Hall conductance activated by layer buckling.

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We study the frequency-dependent conductivity of nodal line semimetals (NLSMs), focusing on the effects of carrier density and energy dispersion on the nodal line. We find that the low-frequency conductivity has a rich spectral structure which can be understood using scaling rules derived from the geometry of their Dupin cyclide Fermi surfaces. We identify different frequency regimes, find scaling rules for the optical conductivity in each, and demonstrate them with numerical calculations of the inter- and intraband contributions to the optical conductivity using a low-energy model for a generic NLSM.

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Bilayer graphene (BLG) shows great potential as a new material for opto-electronic devices because its bandgap can be controlled by varying the stacking orders, as well as by applying an external electric field. An imaging technique that can visualize and characterize various stacking domains in BLG may greatly help in fully utilizing such properties of BLG. Here we demonstrate that infrared (IR) scattering-type scanning near-field optical microscopy (sSNOM) can visualize Bernal and non-Bernal stacking domains of BLG, based on the stacking-specific inter- and intra-band optical conductivities.

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We investigate collective modes in three dimensional (3D) gapless multi-Weyl semimetals with anisotropic energy band dispersions (i.e., with a positive integer J).

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The stacking orders in few-layer graphene (FLG) strongly influences the electronic properties of the material. To explore the stacking-specific properties of FLG in detail, one needs powerful microscopy techniques that visualize stacking domains with sufficient spatial resolution. We demonstrate that infrared (IR) scattering scanning near-field optical microscopy (sSNOM) directly maps out the stacking domains of FLG with a nanometric resolution, based on the stacking-specific IR conductivities of FLG.

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The development of display scan drivers is an essential step in the effort to develop transparent and flexible display devices based on nanowire transistors. Here we report a transparent nanowire-based shift register that functions as the standard logic circuit of a display scan driver. To form the shift register circuits using only n-type nanowire transistors, a novel circuit structure was introduced to avoid the output voltage drop typical of purely n-type circuits.

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