Asymmetric Bipolar Resistive Switching of Halide Perovskite Film in Contact with TiO Layer.

Halide perovskite materials such as methylammonium lead iodide (CHNHPbI) have attracted considerable interest for the resistive random-access memory applications, which exploit a dramatic change in the resistance by an external electric bias. In many semiconductor films, the drift, accumulation, and chain formation of defects explain the change in the resistance by an external bias. This study demonstrates that the interface of CHNHPbI with TiO has a significant impact on the formation and rupture of defect chains and causes the asymmetric bipolar resistive switching in the Au/CHNHPbI/TiO/FTO device (FTO = fluorine-doped tin oxide).

Highly Bendable Flexible Perovskite Solar Cells on a Nanoscale Surface Oxide Layer of Titanium Metal Plates.

We report highly bendable and efficient perovskite solar cells (PSCs) that use thermally oxidized layer of Ti metal plate as an electron transport layer (ETL). The power conversion efficiency (PCE) of flexible PSCs reaches 14.9% with a short-circuit current density (J) of 17.

Low-Temperature Modification of ZnO Nanoparticles Film for Electron-Transport Layers in Perovskite Solar Cells.

An electron-transport layer (ETL) that selectively collects photogenerated electrons is an important constituent of halide perovskite solar cells (PSCs). Although TiO films are widely used as ETL of PSCs, the processing of TiO films with high electron mobility requires high-temperature annealing and TiO dissociates the perovskite layer through a photocatalytic reaction. Here, we report an effective surface-modification method of a room-temperature processed ZnO nanoparticles (NPs) layer as an alternative to the TiO ETL.