Comparative study of deep learning algorithms for atomic force microscopy image denoising.

Atomic force microscopy (AFM) enables direct visualisation of surface topography at the nanoscale. However, post-processing is generally required to obtain accurate, precise, and reliable AFM images owing to the presence of image artefacts. In this study, we compared and analysed state-of-the-art deep learning models, namely MPRNet, HINet, Uformer, and Restormer, with respect to denoising AFM images containing four types of noise.

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.

A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.

Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains.

A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can be selectively grown by controlling Cu-annealing time under argon atmosphere prior to h-BN growth, which provides the h-BN shape varies in triangular, trapezoidal, hexagonal and complex shapes.

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition.

We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows.

In situ synthesis of a large area boron nitride/graphene monolayer/boron nitride film by chemical vapor deposition.

We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films. The boron nitride film/graphene monolayer/boron nitride film (BGB) was found to be a mechanically robust and chemically inert heterostructure, from which the deleterious effects of mechanical transfer processes and unwanted chemical doping under air exposure were eliminated. The chemical compositions of each film layer were monitored ex situ using UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy, and the crystalline structures were confirmed using transmission electron microscopy and selected-area electron diffraction measurements.