Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry.

A fiber-based single-walled carbon nanotube (SWCNT) thin-film-transistor (TFT) has been proposed. We designed complementary SWCNT TFT circuit based on SPICE simulations, with device parameters extracted from the fabricated fiber-based SWCNT TFTs, such as threshold voltage, contact resistance, and off-/gate-leakage current. We fabricated the SWCNTs CMOS inverter circuits using the selective passivation and n-doping processes on a fiber substrate.

High-Mobility and Hysteresis-Free Flexible Oxide Thin-Film Transistors and Circuits by Using Bilayer Sol-Gel Gate Dielectrics.

In this paper, we demonstrate high-performance and hysteresis-free solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) and high-frequency-operating seven-stage ring oscillators using a low-temperature photochemically activated AlO/ZrO bilayer gate dielectric. It was found that the IGZO TFTs with single-layer gate dielectrics such as AlO, ZrO, or sodium-doped AlO exhibited large hysteresis, low field-effect mobility, or unstable device operation owing to the interfacial/bulk trap states, insufficient band offset, or a substantial number of mobile ions present in the gate dielectric layer, respectively. To resolve these issues and to explain the underlying physical mechanisms, a series of electrical analyses for various single- and bilayer gate dielectrics was carried out.

Low-Temperature Postfunctionalization of Highly Conductive Oxide Thin-Films toward Solution-Based Large-Scale Electronics.

Although transparent conducting oxides (TCOs) have played a key role in a wide range of solid-state electronics from conventional optoelectronics to emerging electronic systems, the processing temperature and conductivity of solution-processed materials seem to be far exceeding the thermal limitations of soft materials and insufficient for high-perfomance large-area systems, respectively. Here, we report a strategy to form highly conductive and scalable solution-processed oxide materials and their successful translation into large-area electronic applications, which is enabled by photoassisted postfunctionalization at low temperature. The low-temperature fabrication of indium-tin-oxide (ITO) thin films was achieved by using photoignited combustion synthesis combined with photoassisted reduction process under hydrogen atmosphere.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors.