Ultrabroadband Photodetection with MoS and Gold Nanorod Using Gap-Mode Plasmon Effect.

Plasmon resonance using metal nanostructures enables the realization of high-performance optoelectronic devices via field enhancements in the vicinity of the metal nanostructure. This study proposes an ultrabroadband MoS photodetector based on the gap-mode plasmon of gold nanorods. The use of MoS as a gap spacer for the gap-mode plasmon effect and as a channel material for the photodetector is demonstrated.

Tunable Doping Strategy for Few-Layer MoS Field-Effect Transistors via NH Plasma Treatment.

Molybdenum disulfide (MoS) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (V) and p-type doping by nitrogen substitution in MoS, controlled by the duration of NH plasma treatment.

Ultrathin All-Solid-State MoS-Based Electrolyte Gated Synaptic Transistor with Tunable Organic-Inorganic Hybrid Film.

Electrolyte-gated synaptic transistors (EGSTs) have attracted considerable attention as synaptic devices owing to their adjustable conductance, low power consumption, and multi-state storage capabilities. To demonstrate high-density EGST arrays, 2D materials are recommended owing to their excellent electrical properties and ultrathin profile. However, widespread implementation of 2D-based EGSTs has challenges in achieving large-area channel growth and finding compatible nanoscale solid electrolytes.

Healing Donor Defect States in CVD-Grown MoS Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier.

Molybdenum disulfide (MoS ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (V ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS is proposed using oxygen plasma, with an aluminum oxide (Al O ) barrier layer that protects the MoS channel from damage by plasma treatment.

Flash-Thermal Shock Synthesis of High-Entropy Alloys Toward High-Performance Water Splitting.

High-entropy alloys (HEAs) provide unprecedented physicochemical properties over unary nanoparticles (NPs). According to the conventional alloying guideline (Hume-Rothery rule), however, only size-and-structure similar elements can be mixed, limiting the possible combinations of alloying elements. Recently, it has been reported that based on carbon thermal shocks (CTS) in a vacuum atmosphere at high temperature, ultrafast heating/cooling rates and high-entropy environment play a critical role in the synthesis of HEAs, ruling out the possibility of phase separation.

Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference.

The coming of the big-data era brought a need for power-efficient computing that cannot be realized in the Von Neumann architecture. Neuromorphic computing which is motivated by the human brain can greatly reduce power consumption through matrix multiplication, and a device that mimics a human synapse plays an important role. However, many synaptic devices suffer from limited linearity and symmetry without using incremental step pulse programming (ISPP).