Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications.

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength.

Zero Dimensional-Two Dimensional Hybrid Photodetectors Using Multilayer MoS and Lead Halide Perovskite Quantum Dots with a Tunable Bandgap.

We report high-performance 0D-2D hybrid photodetectors integrated with tunable band gap perovskite (CsPbI, CsFAPbI, and FAPbI) quantum dots and MOCVD-grown bilayer MoS. In our hybrid structure, the lead halide PQDs can be utilized as an absorbing layer of light of specific wavelengths and transfer the photogenerated carriers to the MoS transport layer. With tunable wavelength lead halide PQDs, the 0D-2D hybrid photodetector shows a high responsivity up to 10 AW and high specific detectivity exceeding 10 Jones due to the difference in the built-in potential between PQDs and multilayer MoS layers.