Publications by authors named "Senthil Kumar Eswaran"

Understanding the nanoscale elastic-size-effects of atomically thin transition-metal dichalcogenides (TMDs) as a function of thickness underpins the avenue of flexible 2D electronics. In this work, we employed the atomic force acoustic microscopy (AFAM) technique to investigate the thickness-dependent elastic properties of CVD grown 2H-MoS films. The monolayer MoS exhibited a Young's modulus of 273 ± 27 GPa.

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The decomposition of water pollutants including industrial dyes and chemicals via photocatalytic decontamination is one of the major investigated problems in recent years. Two-dimensional molybdenum disulfide (MoS) layers have shown great promise as an efficient visible-light photocatalyst owing to its numerous active sites and large surface area. In this study, atomically thin MoS films of different thicknesses from monolayer to five-layer and ten layers were fabricated on sapphire substrates using chemical vapor deposition (CVD).

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Atomically thin MoS hosts rich and distinct vibrational spectral features, which are prominent under selective excitation energies near the excitonic transitions. In this work, we have investigated the resonant Raman scattering of the MoS layers of different thicknesses, from monolayer to five-layer samples, measured near resonance with the A excitonic transition. We show that the near-resonance excitation (1.

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Improving the fracture resistance of inorganic thin films is one of the key challenges in flexible electronic devices. A nonconventional in situ sputtering method is introduced to induce residual compressive stress in ZnO:Al thin films during deposition on a bent polymer substrate. The films grown under a larger prebending strain resulted in a higher fracture resistance to applied strains by exhibiting a ∼ 70% improvement in crack-initiating critical strain compared with the reference sample grown without bending.

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Flexible electronic devices need to survive bending or stretching operation without mechanical failure. If inorganic thin films are involved in the device structure, the evolution of cracks is a major challenge to overcome. Here, we report a novel way to substantially improve the fracture behavior of films that are based on intentional utilization of residual stress on the films by in situ sputtering on a stretched polymer substrate.

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