Self-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel.

Recently, high-efficiency III-nitride photonic emitters (PEs) for next-generation displays have been studied. Although micro-light-emitting diodes (μ-LEDs), one of the III-nitride PEs, have attracted considerable attention because of their high efficiency and size flexibility, they have encountered technical limitations such as high defect rate, high processing cost, and low yield. To overcome these drawbacks of μ-LEDs, a lot of research on PEs using one-dimensional (1D) gallium nitride-related nanorods (GNRs) capable of horizontally self-positioning on the electrodes has been carried out.

Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO gas sensors based on low-temperature solution-processed ZnO/TiO nanorods decorated with plasmonic Au nanoparticles.

Nanostructured semiconducting metal oxides such as SnO, ZnO, TiO, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors, we developed NO gas sensors composed of ZnO/TiO core-shell nanorods (NRs) decorated with Au nanoparticles (NPs) synthesized via a simple low-temperature aqueous solution process, operated under ultraviolet irradiation to realize room temperature operation. The fabricated gas sensor with a 10 nm-thick TiO shell layer shows 9 times higher gas sensitivity and faster response and recovery times than ZnO NR-based gas sensors.

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH Growth Interruption.

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time.

Ni-Cu Nanoparticles-Embedded Ag-Based Reflector for High-Efficiency Light-Emitting Diodes.

We investigated the use of a silver reflector embedded with Ni-Cu nanoparticles to achieve low resistance and high reflectivity in GaN-based flip-chip light-emitting diodes. Compared to a single layer of Ag, the NC-NPs/Ag reflector exhibits a higher light reflectance of ~90% at a wavelength of 450 nm, a lower contact resistance of 4.75 × 10 II cm², and improved thermal stability after annealing at 400°C.

Self-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter.

Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core-shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction efficiency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm.

Ultraviolet Photoactivated Room Temperature NO Gas Sensor of ZnO Hemitubes and Nanotubes Covered with TiO Nanoparticles.

Prolonged exposure to NO can cause lung tissue inflammation, bronchiolitis fibrosa obliterans, and silo filler's disease. In recent years, nanostructured semiconducting metal oxides have been widely used to fabricate gas sensors because of their unique structure and surface-to-volume ratio compared to layered materials. In particular, the different morphologies of ZnO-based nanostructures significantly affect the detection property of NO gas sensors.

Polarized ultraviolet emitters with Al wire-grid polarizers fabricated by solvent-assisted nanotransfer process.

Polarized ultraviolet (UV) emitters are essential for various applications, such as photoalignment devices for liquid crystals, high-resolution imaging devices, highly sensitive sensors, and steppers. To increase the high polarization ratio (PR) of a UV emitter, the grating period should be decreased than that of the visible emitter. However, the fabrication of the short period grating directly on UV emitters is still limited.

Enhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter.

We demonstrate the surface plasmon (SP)-enhanced ultraviolet (UV) emitter using Pt nanoparticles (NPs). The UV emitter is hole-patterned on the AlGaN layer to consider the penetration depth of Pt NPs. The Pt NPs with sizes under 50 nm are required to realize the plasmonic absorption in UV wavelength.

Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.

The light to be trapped inside light-emitting diodes (LEDs) greatly affects the luminous efficiency and device lifetime. Abrupt difference in refractive index between the sapphire substrate and GaN-based LEDs causes light trapping by total internal reflection, however, its optical loss has been taken for granted. In this study, we demonstrate that nanoporous GaN can be used as a refractive-index-matching layer to enhance the light transmittance at the sapphire-GaN interface in InGaN/GaN flip-chip light-emitting diodes (FCLEDs).

Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer.

We report the enhanced optical and electrical properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with strain-relaxing Ga-doped ZnO transparent conducting layers (TCLs). Ga-doped ZnO was epitaxially grown on p-GaN by metal-organic chemical vapor deposition. The optical output power of a LED with a 500-nm- thick-Ga-doped ZnO TCL increased by 30.

Transparent Conductive Electrodes of -Ga₂O₃/Ag/-Ga₂O₃ Multilayer for Ultraviolet Emitters.

We investigated the optical and electrical properties of a -Ga₂O₃/Ag/-Ga₂O₃ multilayer transparent conductive electrode deposited on an -Al2O₃ (0001) substrate. For the deposition of a continuous Ag layer, we preliminarily performed anultraviolet-ozone pretreatment of the Ga₂O₃ bottom layer. To obtain a stable -phase of Ga₂O₃, the -Ga₂O₃/Ag/-Ga₂O₃ multilayer was annealed at 700 °C under N₂ atmosphere.

High Efficiency Flip Chip-Based UV Emitter with Indium Tin Oxide Nano Grains/Al Reflector and Periodic Microhole Arrays.

We propose a high efficiency flip chip-based ultraviolet (UV) emitter with aluminum (Al) reflector that includes indium tin oxide (ITO) nano grains for current injection between the Al and -AlGaN layer. Al has attracted attention as a reflector for high efficiency UV emitters because of its high reflectance in the UV region. To improve the efficiency of UV emitter, we generated periodic microhole arrays on the -AlGaN layer, which serve as a scattering center in the flip chip structure and enhance the light extraction efficiency.

Perovskite-Based Artificial Multiple Quantum Wells.

Semiconductor quantum well structures have been critical to the development of modern photonics and solid-state optoelectronics. Quantum level tunable structures have introduced new transformative device applications and afforded a myriad of groundbreaking studies of fundamental quantum phenomena. However, noncolloidal, III-V compound quantum well structures are limited to traditional semiconductor materials fabricated by stringent epitaxial growth processes.

Wide Bandgap Transparent Conducting Electrode of FTO/Ag/FTO Structure for Ultraviolet Light-Emitting Diodes.

We investigated the effect of the Ag interlayer thickness on the structural, electrical and optical properties of FTO/Ag/FTO structures designed for use in wide bandgap transparent conducting electrodes. The top and bottom FTO layers were deposited on α-Al2O3 (0001) substrates via RF magnetron sputtering at 300 °C and Ag interlayers were deposited using an e-beam evaporator system. We optimized the figure of merit by changing the thickness of the inserted Ag interlayer from 10 nm to 14 nm, achieving a maximum value of 2.

High Reliability of Ag Reflectors with AgCu Alloy for High Efficiency GaN-Based Light Emitting Diodes.

We propose an Ag reflector layer with an AgCu alloy layer as a thermally reliable reflector for high power flip-chip and vertical light emitting diodes (LEDs). By annealing the deposited Ag and Cu layers, intermixed grains and grain boundaries from the alloyed AgCu layer were formed on the LEDs, and CuO nano dots precipitated at the grain boundaries. A thick AgCu layer was deposited to cover the AgCu alloy layer.

Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes.

Metal nanowires have been gaining increasing attention as the most promising stretchable transparent electrodes for emerging field of stretchable optoelectronic devices. Nanowelding technology is a major challenge in the fabrication of metal nanowire networks because the optoelectronic performances of metal nanowire networks are mostly limited by the high junction resistance between nanowires. We demonstrate the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag solders via an electrochemical Ostwald ripening process and high electrostatic potential at the junctions of AgNWs.

Self-standing ZnO nanotube/SiO core-shell arrays for high photon extraction efficiency in III-nitride emitter.

Self-standing ZnO nanotube (ZNT) arrays were fabricated on the surface of a GaN-based emitter with an indium tin oxide (ITO) transparent layer using a hydrothermal method and temperature cooling down process. For the greater enhancement of photon extraction efficiency, ZNT/SiO core-shell nanostructure arrays were fabricated on the emitter with a 430 nm wavelength. The optical output power of ZNT/SiO core-shell arrays on the emitter with ITO electrode was remarkably enhanced by 18.

Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters.

The control of the refractive index and electrical conductivity in the dielectric layer of omnidirectional reflectors (ODRs) is essential to improve the low efficiency of AlGaN-based UV emitters. Here, we report self-assembled indium tin oxide (ITO) nanoball-embedded omnidirectional reflectors (NODRs) for use in high-efficiency AlGaN-based UV emitters at 365 nm. These NODRs consisted of a reflective Al layer, a self-assembled conducting ITO nanoball layer for current injection and spreading, and nanovoids that provided a low refractive index to achieve highly efficient UV emitters.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased.

Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching.

We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration.

Bioactive compounds from the roots of Asiasarum heterotropoides.

A new tetrahydrofuran lignan, (7S,8R,7'S,8'S)-3-methoxy-3',4'-methylenedioxy-7,9'-epoxylignane-4,7',9-triol (1), and 21 known compounds 2-22 were isolated from the roots of Asiasarum heterotropoides by chromatographic separation methods. The structures of all compounds 1-22 were elucidated by spectroscopic analysis including 1D- and 2D-NMR. Fourteen of these compounds (1-3, 7, 10, 12-17, 19, 21, and 22) were isolated from this species in this study for the first time.

Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.

The improvement of the optical output power of GaN-based light emitting diodes (LEDs) was achieved by employing nano-sized flat-top hexagonal ZnO rods. ZnO nanorods (NRs) with the average diameters of 250, 350, and 580 nm were grown on p-GaN top surfaces by a simple wet-chemical method at relatively low temperature (90 degrees C) to investigate the effect of the diameter of ZnO NRs on the light extraction efficiency. Consequently, the enhancement by the factor of as high as 2.

Cytotoxic and anti-inflammatory constituents from the seeds of Descurainia sophia.

A new sinapoyl glycoside, 1,3-di-O-sinapoyl-β-D-glucopyranose (1) along with 13 known compounds, including, sinapoyl glycosides (2 and 3), cardenolide glycoside (4), flavonoids (5-10), lignan (11), phenolic acids (12 and 13), and phytosterol (14), were isolated from the seeds of Descurainia sophia by chromatographic separation methods. The structures of 1-14 were determined by the interpretation of spectroscopic data as well as by comparison of that data with previously reported values. Compounds 2, 3, 5, 6, and 11 were identified in and isolated from this plant for the first time in this study.

Anticancer potential of an ethanol extract of Asiasari radix against HCT-116 human colon cancer cells in vitro.

Radix of Asiasarum heterotropoides var. mandshuricum F. Maekawa (A.

Ethanol extract of Gleditsia sinensis thorn suppresses angiogenesis in vitro and in vivo.

Background: Gleditsia sinensis thorns have been widely used in traditional Korean medicine for the treatment of several diseases, including obesity, thrombosis, and tumor-related diseases. The aim of the study is to determine the antiangiogenic effect of Gleditsia sinensis thorns in vitro and in vivo in a bid to evaluate its potential as an anticancer drug.

Methods: Ethanol extract of Gleditsia sinensis thorns (EEGS) were prepared and used for in vitro and in vivo assays.